Atomic layer deposition (ALD) reactor, both plasma assisted and thermal for up to 200 mm wafers. Equipped with a loadlock and four precursors-inputs. Automatic pressure control and turbo pump. Ozone generator and process monitoring available with in-situ spectroscopic ellipsometry, mass spectroscopy and optical emission spectroscopy during process. Has been used for instance for ALD of TiN, Ru, TiO2 and SrTiO3.