2 expanding thermal plasma (ETP) reactors, both equipped with a load-lock chamber. Deposition of amorphous and microcrystalline silicon, silicon nanocrystals, silicon nitride and silicon dioxide, amorphous carbon and aluminium-doped zinc oxide. The setup can be complemented with an rf power supply or pulse-shaped substrate biasing in order to carry out dedicated studies on the role of ion bombardment on film growth. Furthermore, the setups are equipped with in situ diagnostics such as optical emission spectroscopy, spectroscopic ellipsometry and mass spectrometry.
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