Tsinghua University Submits Chinese Patent Application for Plasma Assisted Epitaxial Growth Device and Method

Press/Media: Expert Comment

Period24 Dec 2015

Media coverage

1

Media coverage

  • TitleTsinghua University Submits Chinese Patent Application for Plasma Assisted Epitaxial Growth Device and Method
    Media name/outletGlobal IP News. Semiconductor Patent News
    CountryIndia
    Date24/12/15
    PersonsYi Wang
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