Investigators at Eindhoven University of Technology Discuss Findings in Applied Physics [Isotropic Atomic Layer Etching of Gan Using Sf6 Plasma and Al(Ch3)(3)]

Media coverage

• Title	Investigators at Eindhoven University of Technology Discuss Findings in Applied Physics [Isotropic Atomic Layer Etching of Gan Using Sf6 Plasma and Al(Ch3)(3)]
  Media name/outlet	Physics Daily News
  Date	22/09/23
  Persons	Harm C.M. Knoops, Adrie J.M. Mackus